(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

GB62 Nexperia United Kingdom

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Manchester Hamburg Until 8/22/2026 0+ years exp H-1B sponsor history First posted June 23, 2026 Last posted June 23, 2026
Job description

About the Role
Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions.

What You Will Do

  • Lead device architecture definition and optimization for GaN technologies

  • Own performance targets and balance trade-offs across performance, reliability, and manufacturability

  • Drive TCAD simulation, modeling, and design to support technology and product development

  • Collaborate with cross-functional teams across process, characterization, reliability, and product engineering

  • Support industrialization by delivering robust, scalable device concepts

Your Profile

  • Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field

  • Proven experience in GaN or wide bandgap device development

  • Strong expertise in device physics, TCAD simulation, and semiconductor design

  • Track record of leading complex, multidisciplinary technical projects

  • Analytical, self-driven, and collaborative mindset in an international environment

Your Team

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.

D&I Statement

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.

In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.

About this role

Summary

Lead GaN device development, simulation, and optimization in a global team.

Job title

Principal Device Engineer (m/f/d) – GaN Power Devices

Experience level

senior level

Minimum experience

0+ years exp

Industry

semiconductors

Location requirements

Manchester, Hamburg, Munich; remote not specified

Salary

Not specified

Visa sponsorship

H-1B sponsor history

Management role

No

Skills & keywords

Required skills

device physicsTCAD simulationsemiconductor design

Preferred skills

None specified

Specializations

GaNdevice physicsTCADsemiconductor design
Locations

Structured locations inferred from the posting.

Manchester, UK

On-site City

Hamburg, Germany

On-site City

Munich, Germany

On-site City