Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

Renesas Electronics

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Takasaki, Gunma, jp on site Until 9/29/2026 15+ years exp H-1B sponsor history First posted July 31, 2026 Last posted July 31, 2026
Job description

We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization.

Key Responsibilities:

  • Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
  • Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies
  • Perform wafer probing and analyze assembled product performance data for each development cycle
  • Analyze wafer-level electrical test results and package-level performance data for each development iteration
  • Support derivative technology development based on proven technology platforms
  • Lead yield improvement activities and support technology transfer to mass production
  • Contribute to the development of derivative products based on established and mature technology platforms
  • Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field
  • Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs
  • Solid understanding of power device physics and semiconductor fabrication processes
  • Hands-on experience with TCAD tools and simulation-based device analysis
  • Intermediate-level proficiency in both written and spoken English and Japanese

Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.

About this role

Summary

Develop and optimize MV shielded-gate trench MOSFET processes and technology

Job title

Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

Experience level

15+ years

Minimum experience

15+ years exp

Industry

semiconductors

Location requirements

Takasaki, Gunma, Japan, on-site work required

Salary

Not specified

Visa sponsorship

H-1B sponsor history

Management role

No

Skills & keywords

Required skills

power device physicssemiconductor fabricationTCADwafer probingperformance analysis

Preferred skills

power semiconductordevice analysisprocess simulationelectrical testingderivative technology development

Specializations

power semiconductorprocess developmentMOSFETwafer probingTCAD
Locations

Structured locations inferred from the posting.

Takasaki, Gunma, Japan

On-site City