Pr. HV-BCD Device engineer
CZ61 NXP Semiconductors Czech Republic s.r.o.
Apply to this job Hsinchu Until 8/21/2026 10+ years exp H-1B sponsor history First posted June 13, 2026 Last posted June 13, 2026
Job description
•Role Purpose
–Lead the development and optimization of high-voltage (HV) and BCD device architectures. This role requires a deep understanding of device physics and a data-driven approach to ensure industry-leading performance and reliability for power management solutions.
•Key Responsibilities
–Device Development: Lead the architecture design and optimization of HV devices (LDMOS, EDMOS, ESD) on 180nm to 55nm BCD nodes.
–Physics Analysis: Analyze and optimize Device Physics parameters, including BV, Rdson, SOA, and reliability (HCI/NBTI).
–Simulation & Modeling: Utilize TCAD for 2D/3D process and device simulations to accelerate development cycles.
–Device Verification: Define verification plans and execute statistical analysis using JMP for DOE and WAT data.
–Design Integration: Work within Cadence environments for layout review and test structure design.
–Cross-functional Collaboration: Partner with PI and PE teams to resolve yield, reliability, and manufacturing bottlenecks.
•Required Qualifications
–Experience: Master’s or Ph.D. in EE, Physics, or related field with 10+ years of semiconductor industry experience.
–Technical Expertise:
•Profound knowledge of Device Architecture and Device Physics.
•Hands-on experience in 180nm to 55nm BCD process nodes.
–Tools:
•Expertise in TCAD (Sentaurus / Silvaco).
•Expertise in JMP for statistical data analysis.
•Proficiency in Cadence (Layout/Virtuoso).
•Preferred Qualifications (Plus)
–Advanced Power Devices: Experience with GaN, SiC, or IGBT development.
–Silicon Photonics: Knowledge of Photonics integration and device physics.
–Domain Knowledge:
•Process Integration (PI): Understanding of mask flow and doping profiles.
•Product Engineering (PE): Experience in CP/FT data correlation and yield enhancement.
•Competencies
–Accountability: Strong ownership of project milestones and outcomes.
–Critical Thinking: Ability to identify root causes in complex device failures.
–Interpersonal Skills: Effective communication across design and foundry teams.
–Data-driven: Committed to objective decision-making through rigorous data analysis.
About this role
Summary
Lead HV/BCD device development, optimization, analysis, simulation, and collaboration.
Job title
Pr. HV-BCD Device engineer
Experience level
10+ years
Minimum experience
10+ years exp
Industry
semiconductor
Location requirements
Hsinchu, on-site role, no remote work allowed.
Salary
Not specified
Visa sponsorship
H-1B sponsor history
Management role
No
Skills & keywords
Required skills
device physicsdevice architectureTCADJMPCadence
Preferred skills
GaNSiCIGBTphotonic deviceprocess integration
Specializations
device physicspower managementTCADdevice architectureprocess nodes
Locations
Structured locations inferred from the posting.
Hsinchu, North District, Hsinchu City, Taiwan
On-site City
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